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SIDAM Publications

Journals top

Danilewsky, A. N., Wittge, J., Rack, A., Weitkamp, T., Simon, R., Baumbach, T., & McNally, P. J. 2008, "White beam topography of 300 mm Si wafers", Journal of Material Science : Materials in Electronics, vol. 19, p. S269-S272.
Allen, D., Wittge, J., Zlotos, A., Gorostegui-Colinas, E., Garagorri, J., McNally, P. J., Danilewksy, A. N., & Elizalde, M. R. 2009, "Observation of nano-indent induced strain fields and dislocation generation in Silicon wafers using Micro-Raman Spectroscopy and White Beam X-Ray Topography", Nuclear Instruments and Methods in Physics B. (submitted)
Danilewsky, A. N., Wittge, J., Hess, A., Cröll, A., Allen, D., McNally, P. J., Vagovic, P., Cecilia, A., Li, Z. J., & Baumbach, T. 2009, "Dislocation Generation Related to Microcracks in Si-Wafers: High Temperature In-situ Study with White Beam X-Ray Topography", Nuclear Instruments and Methods in Physics B. (submitted)

Invited Talks top

Bowen, K. Risks of wafer fracture in silicon processing. The Intel Ireland Research Conference. 2008.
Danilewksy, A. N. Characterisation of Defects in Semiconductor Crystals: single and poly crystalline. 15-7-2008. Institut für Kristallzüchtung, IKZ, Berlin.

Contributed Talks top

Danilewksy, A. N., Wittge, J., Zlotos, A., Allen, D., McNally, P. J., Vagovic, P., Cecilia, A., Li, Z. J., & Baumbach, T. 2009, In-situ observation of Dislocations in Si at High Temperatures with White Beam X-Ray Topography , Annual Meeting 2009 of the Deutsche Gesellschaft für Kristallographie, March 9-12, 2009, Hannover, Germany.
Li, Z. J., Helfen, L., Danilewksy, A. N., Mikulik, P., Fossati, M., Xu, F., Reieschig, P., Altapova, V., Hänschke, D., Buth, G., & Baumbach, T. 2009, Analysis of Micro Defects and Dislocations in Silicon Wafer by X-Ray Rocking Curve Imaging, Annual Meeting 2009 of the Deutsche Gesellschaft für Kristallographie, March 9-12, Hannover, Germany.
Danilewsky, A. N., Wittge, J., Hess, A., Cröll, A., Allen, D., McNally, P. J., Vagovic, P., Cecilia, A., Li, Z. J., Baumbach, T., Gorostegui-Colinas, E., & Elizalde, M. R. 2009, Investigation of Si Wafer Damage in Manufacturing Processes at High Temperature by White Beam X-Ray Topography, E-MRS Spring Meeting 2009, June 8-12, Strasbourg, France.

Poster Presentations top

Danilewsky, A. N., Zlotos, A., Li, Z. J., Vagovic, P., Cecilia, A., Allen, D., & McNally, P. J. X-Ray Topography of Large Si - Wafer. 7th ANKA Users' Meeting. 8-10-2008. Karlsruhe, Germany. 9-10-2008.
Danilewsky, A. N., Wittge, J., Zlotos, A., Allen, D., McNally, P. J., Vagovic, P., Cecilia, A., Li, Z. J., Baumbach, T., Gorostegui-Colinas, E., & Elizalde, M. R. Investigation of Si Wafer Damage in Manufacturing Processes (SIDAM) at High Temperature by White Beam X-Ray Topography (SXRT). 7th ANKA Users' Meeting. 8-10-2008. Karlsruhe, Germany. 9-10-2008.
Allen, D., Wittge, J., Zlotos, A., Gorostegui-Colinas, E., Elizalde, M. R., Danilewsky, A. N., & McNally, P. J. Observation of nano-indent induced strain fields and dislocation generation in Silicon wafers using Micro-Raman spectroscopy and White Beam X-ray Topography. Annual HASYLAB Users' Meeting. 30-1-2009. Hamburg, Germany.
Hess, A., Danilewsky, A. N., Wittge, J., Cröll, A., Li, Z. J., Vagovic, P., Cecilia, A., dos Santos Rolo, T., Baumbach, T., Allen, D., & McNally, P. J. Röntgentopographie an großen Si - Wafern. Deutsche Kristallzüchtertagung, Jahrestagung der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung. 3-3-2009. Dresden, Germany. 6-3-2009.
Wittge, J., Danilewsky, A. N., Hess, A., Cröll, A., Allen, D., McNally, P. J., Vagovic, P., Cecilia, A., Li, Z. J., Baumbach, T., Gorostegui-Colinas, E., & Elizalde, M. R. Charakterisierung von definiert erzeugten Defekten in Silicium Wafern. Deutsche Kristallzüchtertagung, Jahrestagung der Deutschen Gesellschaft für Kristallwachstum und Kristallzüchtung, DGKK. 1-4-2009. Dresden, Germany. 3-4-2009.
Allen, D., Wittge, J., Zlotos, A., Gorostegui-Colinas, E., Garagorri, J., Elizalde, M. R., Danilewsky, A. N., & McNally, P. J. Observation of nano-indent induced strain fields and dislocation generation in Silicon wafers using Micro-Raman spectroscopy and White Beam X-ray Topography. E-MRS Spring Meeting