Jordan Valley Semiconductors UK Ltd 

Jordan Valley Semiconductors UK Ltd

Jordan Valley Semiconductors UK, Ltd is part of Jordan Valley Semiconductors, Ltd.

Jordan Valley Semiconductors UK, Ltd is the leading supplier of HRXRD (High Resolution XRD) metrology for the semiconductor and compound industries.

Its tasks will be to manage part of the project (website and intellectual property); to obtain XRDI images of defects introduced by nanoindentation at CEIT; to provide Durham University with defect images for theoretical analysis; and to perform collaborative experiments with DCU to correlate the XRDI and optical images and spectroscopy.

Jordan Valley Semiconductors Ltd provides semiconductor metrology solutions for thin films based on novel, rapid, non-contacting, and non-destructive x-ray technologies and offer a comprehensive family of solutions based on advanced X-Ray Reflectivity (XRR), X-Ray Fluorescence (XRF), and Small Angle X-Ray Scattering (SAXS) technologies. These tools are fully automated, production ready, and ideal for both blanket and patterned wafers. Jordan Valley’s x-ray technologies enables accurate and precise characterization of all film types including single layers and multilayer stacks, high k and low k materials, metals and dielectrics, amorphous, poly-crystal and single crystal films. Research, development, and manufacturing are based in Migdal Ha’Emek, Israel. Applications engineering, customer support services, sales and marketing are located in Austin, Texas. Jordan Valley products are used in production by leading semiconductor manufacturers worldwide.


David Jacques graduated from the engineering school INSA in Toulouse (France) in 1999 with a French Engineer degree in Physics of Materials and a D.E.A. diploma in Materials, Technologies and Components of Electronics. After graduation, he spent 5 years in Grenoble (France) where he worked as an R&D process engineer specialising in Lithography and Thin film deposition (LPCVD) process. He joined Bede Scientific Instruments Ltd in 2004 as an applications engineer supporting X-Ray diffraction equipment at different semiconductor manufacturing plants. Since 2006, he has held the position of BedeScan™ Product Manager in charge of the development of XRDI equipment for crystalline defect inspection in the semiconductor industry. Since April 2008 he is the SIDAM project leader for Jordan Valley Semiconductors UK Ltd.
Richard Bytheway has been working at Bede since the middle of 2001. He joined the Innovation and Business Development group as a Development Scientist and has been in an R&D role ever since. In this time he has worked on development of the MicroSource® X-Ray generator, the BedeScan Topography tool, an inline crystallography XRD system and several other lab and process semiconductor X-ray metrology systems. Richard is now a Technologist in the R&D team in Jordan Valley, UK.

Richard was awarded a BSc in Physics with Laser Physics from University of Wales, Swansea in 1994.

Paul Ryan joined Bede’s UK office in early 2001 after working for two years as a Postdoctoral Fellow at the University of North Carolina, USA, where he studied the growth and characterisation of various epitaxial thin films. He originally joined Bede as an applications scientist where he was responsible for applications support, scientific sales support and training. Paul became Product Manager for the company’s BedeMetrix™ X-ray metrology tools for semiconductor research/development and production control in April 2004. He was involved in the development of the fast relaxation method and the integration of small spot optics into the BedeMetrix™ tools. Subsequently he became the VP of Technology, responsible for technology, product and process development in both a R&D and production environment. Paul is now a Director of Technology at Jordan Valley, responsible for HRXRD development worldwide and managing the UK technology and engineering teams.

Paul obtained his PhD in 1999 from the University of Leeds. The subject of his PhD was the MBE growth and characterisation of thin film multilayers

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